- UPGRADE TO IMPRESSIVE NVMe SPEED Whether you need a boost for gaming or a seamless workflow for heavy graphics, the 980 is a smart choice for outstanding SSD performance
- PACKED WITH SPEED 980 delivers value, without sacrificing sequential read/write speeds up to 3,100/2,600 MB/s
- KEEP MOVING WITH FULL POWER MODE Keep your SSD running at its peak with Full Power Mode, which drives continuous and consistent high performance
- RELIABLE THERMAL CONTROL 980 uses nickel coating to help manage the controller’s heat level and a heat spreader label to deliver effective thermal control of the NAND chip
- SMART THERMAL SOLUTION Embedded with Samsung’s cutting edge thermal control algorithm, 980 manages heat on its own to deliver durable and reliable performance, while minimizing performance fluctuations during extended usage
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SAMSUNG 980 M.2 2280 500GB PCI-Express 3.0 x4, NVMe 1.4 V-NAND MLC Internal Solid State Drive (SSD) MZ-V8V500B/AM
The SAMSUNG 980 M.2 SSD delivers exceptional performance with PCIe 3.0 x4 interface and NVMe 1.4 technology, offering sequential read speeds up to 3,500 MB/s for lightning-fast boot times and file transfers. Built with Samsung’s advanced V-NAND MLC technology, this 500GB drive provides superior reliability and endurance compared to standard TLC drives. The compact M.2 2280 form factor enables seamless installation in laptops and desktops without cables, while intelligent TurboWrite technology accelerates write performance. Backed by Samsung’s proven track record in memory technology and a comprehensive warranty, the 980 represents an ideal balance of speed, capacity, and value for gamers, content creators, and professionals seeking to upgrade from traditional hard drives or enhance system responsiveness.
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| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V8V500B/AM |
| Used For | Consumer |
| Application | Desktop |
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V8V500B/AM |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 500GB |
| Form Factor | M.2 2280 |
| Memory Components | V-NAND MLC |
| Max Sequential Read | Up to 3100 MB/s |
| 4KB Random Read | QD1: 17 000 IOPS, QD32: 400 000 IOPS |
| 4KB Random Write | QD1: 54 000 IOPS, QD32: 470 000 IOPS |
| Depth | 80.15mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Width | 22.15mm |
| Encryption | AES 256-bit Full Disk Encryption TCG/Opal V2.0 Encrypted Drive (IEEE1667) |
| Power Consumption (Active) | 4.3W |
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