- INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 970 EVO Plus SSD’s NVMe interface (PCIe Gen 3.0 x4 NVMe 1.3) offers enhanced bandwidth, low latency, and power efficiency ideal for tech enthusiasts, high end gamers, and 4K & 3D content designers
- BREAKTHROUGH READ WRITE SPEEDS: Sequential read and write performance levels of up to 3,500 MB/s and 3,200 MB/s, respectively; Random Read (4KB, QD32): Up to 480,000 IOPS Random Read
- PERFORMANCE OPTIMIZATION AND DATA SECURITY: Seamless cloning and file transfers with Samsung Magician Software, the ideal SSD management solution for performance optimization and data security with automatic firmware updates
- SUPERIOR HEAT DISSIPATION: Samsung’s Nickel-coated controller and Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops
- 300 TBW (Terabytes Written)
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SAMSUNG 970 EVO PLUS M.2 2280 500GB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND Internal Solid State Drive (SSD) MZ-V7S500B/AM
The SAMSUNG 970 EVO PLUS is a high-performance M.2 NVMe SSD delivering exceptional speed and reliability for demanding computing tasks. With PCIe Gen 3.0 x4 interface and NVMe 1.3 protocol, it achieves read speeds up to 3,500 MB/s and write speeds up to 3,200 MB/s—dramatically faster than traditional SATA drives. The advanced V-NAND technology ensures superior endurance and data integrity, while the compact M.2 2280 form factor saves space in laptops and desktops. Samsung’s proven track record in memory technology, combined with intelligent TurboWrite acceleration and thermal management, makes this 500GB drive ideal for gaming, content creation, and professional workloads requiring rapid data access and system responsiveness.
Quote20 pcs(MOQ)
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| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V7S500B/AM |
| Used For | Consumer |
| Application | Desktop |
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V7S500B/AM |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 500GB |
| Form Factor | M.2 2280 |
| Memory Components | V-NAND 3-bit MLC |
| Max Sequential Read | Up to 3500 MB/s |
| 4KB Random Read | QD1: Up to 19 000 IOPS, QD32: Up to 480 000 IOPS |
| 4KB Random Write | QD1: Up to 60 000 IOPS, QD32: Up to 550 000 IOPS |
| Depth | 80.15mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Width | 22.15mm |
| Encryption | AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive) |
| Power Consumption (Active) | Average: 5.8W, Maximum: 9W (Burst mode) |
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