- Innovative V-Nand Technology: Powered by Samsung V NAND Technology, the 970 EVO SSD’s NVMe interface (PCIe M.2 2280) offers enhanced bandwidth, low latency, and power efficiency ideal for tech enthusiasts, high end gamers, and 4K & 3D content designers
- Breakthrough read write speeds: Sequential read and write performance levels of up to 3,400 MB/s and 2,300 MB/s, respectively; Random Read (4KB, QD32): Up to 370,000 IOPS Random Read
- Performance optimization and data security: Seamless cloning and file transfers with Samsung Magician Software, the ideal SSD management solution for performance optimization and data security with automatic firmware updates
- Superior heat dissipation: Samsung’s dynamic thermal guard automatically monitors and maintains optimal operating temperatures to minimize performance drops. Secure Encryption
- 300 TBW (Terabytes Written)
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SAMSUNG 970 EVO M.2 2280 500GB PCIe Gen3. x4 , NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E500BW
The SAMSUNG 970 EVO M.2 SSD delivers exceptional performance with read speeds up to 3,400 MB/s and write speeds up to 2,300 MB/s, making it ideal for gaming, content creation, and demanding applications. This 500GB drive features Samsung’s advanced V-NAND 3-bit MLC technology for superior reliability and endurance, while the compact M.2 2280 form factor saves space in laptops and desktops. With PCIe Gen3 x4 interface and NVMe 1.3 protocol, it provides significantly faster boot times, file transfers, and application loading compared to traditional SATA drives. The drive includes Samsung Magician software for easy optimization and monitoring, plus a 5-year limited warranty for peace of mind. Its proven track record, energy efficiency, and seamless compatibility make it an excellent upgrade for users seeking premium SSD performance at a competitive price point.
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| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V7E500BW |
| Used For | Consumer |
| Application | Desktop |
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V7E500BW |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 500GB |
| Form Factor | M.2 2280 |
| Memory Components | V-NAND 3-bit MLC |
| Max Sequential Read | Up to 3400 MB/s |
| 4KB Random Read | QD1: Up to 15 000 IOPS, QD32: Up to 370 000 IOPS |
| 4KB Random Write | QD1: Up to 50 000 IOPS, QD32: Up to 450 000 IOPS |
| Depth | 80.26mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Width | 22.10mm |
| Power Consumption (Active) | Average: 5.7W, Maximum: 10W (Burst mode) |
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