- M.2 2280
- 1TB
- PCI-Express 3.0 x4
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SAMSUNG 960 PRO M.2 1TB NVMe PCI-Express 3.0 x4 Internal Solid State Drive (SSD) MZ-V6P1T0BW
The SAMSUNG 960 PRO M.2 1TB is a high-performance NVMe SSD delivering exceptional speed with sequential read speeds up to 3,500 MB/s and write speeds up to 2,100 MB/s. Built with Samsung’s advanced V-NAND technology and featuring a compact M.2 form factor, it connects via PCIe 3.0 x4 interface for maximum bandwidth utilization. This enterprise-grade drive offers superior reliability with a 5-year warranty and 800 TBW endurance rating, making it ideal for demanding applications, gaming, content creation, and professional workloads. The drive significantly reduces boot times, accelerates file transfers, and enhances overall system responsiveness while maintaining consistent performance under heavy workloads. Its space-efficient design eliminates cable management issues and is perfect for ultrabooks, desktops, and workstations requiring premium storage performance.
Quote5 pcs(MOQ)
| Height | 2.30mm |
|---|---|
| Width | 22.10mm |
| Used For | Consumer |
| Device Type | Internal Solid State Drive (SSD) |
| Brand | SamSung |
| Height | 2.30mm |
|---|---|
| Width | 22.10mm |
| Used For | Consumer |
| Device Type | Internal Solid State Drive (SSD) |
| Brand | SamSung |
| Capacity | 1TB |
| Cache | 1024MB |
| Controller | Samsung Polaris controller |
| Max Shock Resistance | 1500G duration 0.5 msec 3 axis |
| Products Status | New |
| Depth | 80.00mm |
| Application | Desktop |
| Series | Samsung 960 PRO |
| Interface | PCIe 3.0 x4 |
| Max Sequential Write | Up to 2100 MB/s |
| Features | Device Sleep Mode Support: 5mW (L1.2), Encryption Support: AES 256-bit for User Data Encryption, GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T Support: S.M.A.R.T Supported, TRIM Support: TRIM Supported |
| Max Sequential Read | Up to 3500 MB/s |
| Power Consumption (Idle) | 40mW |
| 4KB Random Write | Up to 360 000 IOPS (4KB QD32), Up to 50 000 IOPS (4KB QD1) |
| MTBF | 1 500 000 hours |
| Model | MZ-V6P1T0BW |
| Operating Temperature | 0C ~ +70C |
| Power Consumption (Active) | 5.3W |
| Weight | 9.00g |
| Form Factor | M.2 2280 |
| Memory Components | 3D NAND |
| 4KB Random Read | Up to 14 000 IOPS (4KB QD1), Up to 440 000 IOPS (4KB QD32) |
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