| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-N6E500BW |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 500GB |
| Form Factor | M.2 2280 |
| Memory Components | V-NAND 3-bit MLC |
| Max Sequential Read | Up to 550 MB/s |
| 4KB Random Read | QD1: Up to 10 000 IOPS, QD32: Up to 97 000 IOPS |
| 4KB Random Write | QD1: Up to 42 000 IOPS, QD32: Up to 88 000 IOPS |
| Storage Temperature | -45C ~ +85C |
| Depth | 80.00mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Width | 22.00mm |
| Power Consumption (Active) | Average: 2.5W, Maximum: 4.0W (Burst mode) |
* NOTE: Image may not exactly match the product
SAMSUNG 860 EVO Series M.2 2280 500GB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E500BW
The SAMSUNG 860 EVO M.2 SSD delivers exceptional performance and reliability in a compact form factor. Featuring 500GB of storage capacity with Samsung’s advanced V-NAND 3-bit MLC technology, this drive offers superior durability and data integrity compared to standard TLC drives. The M.2 2280 form factor provides space-saving installation perfect for ultrabooks and compact desktops, while SATA III interface ensures broad compatibility. Key benefits include faster boot times, quicker application loading, and enhanced system responsiveness compared to traditional hard drives. Samsung’s proven track record in memory technology, combined with the drive’s energy efficiency and silent operation, makes this SSD an ideal upgrade for users seeking reliable performance enhancement without compromising system space or compatibility.
Quote5 pcs(MOQ)
Bulk Order Discounts Available
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-N6E500BW |
| Used For | Consumer |
| Application | Desktop |
Inquiry Now
Contact us for more discounts!
