SAMSUNG 860 EVO Series M.2 2280 500GB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E500BW

Height

2.30mm

Width

22.00mm

Used For

Consumer

Device Type

Internal Solid State Drive (SSD)

Brand

SamSung

Height	2.30mm
Width	22.00mm
Used For	Consumer
Device Type	Internal Solid State Drive (SSD)
Brand	SamSung
Capacity	500GB
Cache	Samsung 512MB Low Power DDR4 SDRAM
Controller	Samsung MJX Controller
Max Shock Resistance	1 500G & 0.5 ms (Half sine)
Products Status	New
Depth	80.00mm
Storage Temperature	-45C ~ +85C
Application	Desktop
Series	Samsung 860 EVO
Interface	SATA III
Max Sequential Write	Up to 520 MB/s
Features	AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive), Device Sleep Mode Support, GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T. Support, WWN Support: World Wide Name supported
Operating Humidity	5% to 95% RH
Max Sequential Read	Up to 550 MB/s
Power Consumption (Idle)	50 mW
4KB Random Write	QD1: Up to 42 000 IOPS, QD32: Up to 88 000 IOPS
Max Vibration Resistance	20G
MTBF	1 500 000 hours
Model	MZ-N6E500BW
Operating Temperature	0C ~ +70C
Power Consumption (Active)	Average: 2.5W, Maximum: 4.0W (Burst mode)
Weight	80.00g
Form Factor	M.2 2280
Memory Components	V-NAND 3-bit MLC
4KB Random Read	QD1: Up to 10 000 IOPS, QD32: Up to 97 000 IOPS