Brand | SamSung |
---|---|
Products Status | New |
Model | MZ-N6E1T0BW |
Used For | Consumer |
Application | Desktop |
Capacity | 1TB |
Form Factor | M.2 2280 |
Memory Components | V-NAND 3-bit MLC |
Max Sequential Read | Up to 550 MB/s |
4KB Random Read | QD1: Up to 10 000 IOPS, QD32: Up to 97 000 IOPS |
4KB Random Write | QD1: Up to 42 000 IOPS, QD32: Up to 88 000 IOPS |
Depth | 80.00mm |
Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
Width | 22.00mm |
Power Consumption (Active) | Average: 3.0W, Maximum: 4.5W (Burst mode) |
SAMSUNG 860 EVO Series M.2 2280 1TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E1T0BW
The SAMSUNG 860 EVO M.2 SSD delivers exceptional performance and reliability in a compact form factor. Featuring 1TB of storage capacity with Samsung’s advanced V-NAND 3-bit MLC technology, this drive offers superior durability and data integrity compared to standard TLC drives. The M.2 2280 design saves valuable space in laptops and compact desktops while maintaining SATA III compatibility for easy installation. With read speeds up to 550 MB/s and write speeds up to 520 MB/s, it dramatically reduces boot times and application loading. The drive includes Samsung’s proven track record for quality, comprehensive software suite for optimization, and excellent power efficiency for extended battery life in mobile devices. Backed by a 5-year warranty and 600 TBW endurance rating, the 860 EVO M.2 represents the ideal balance of performance, reliability, and value for system upgrades.
Quote5 pcs(MOQ) Minimum Order Quantity
Bulk Order Discounts Available
Brand | SamSung |
---|---|
Products Status | New |
Model | MZ-N6E1T0BW |
Used For | Consumer |
Application | Desktop |
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