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SAMSUNG 860 Pro Series 2.5″ 512GB SATA III V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-76P512BW

The SAMSUNG 860 Pro Series 512GB SSD delivers professional-grade performance with cutting-edge V-NAND 2-bit MLC technology, offering exceptional durability and reliability for demanding workloads. This 2.5-inch SATA III drive provides blazing-fast read speeds up to 560 MB/s and write speeds up to 530 MB/s, dramatically reducing boot times and application loading. Built with Samsung’s advanced 3D V-NAND flash memory, it ensures superior endurance with up to 300 TBW (terabytes written) and a 5-year warranty. The drive features intelligent TurboWrite technology for sustained peak performance, advanced error correction, and AES 256-bit hardware encryption for data security. Ideal for content creators, professionals, and power users seeking maximum performance, longevity, and reliability in a storage solution that transforms system responsiveness while maintaining data integrity under intensive use.

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BrandSamSung
Products StatusNew
ModelMZ-76P512BW
Used ForConsumer
ApplicationDesktop
  • INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 860 PRO SSD offers optimized performance for everyday computing as well as rendering large-sized 4K videos and 3D data used by the latest applications
  • ENHANCED READ WRITE SPEEDS: Sequential read and write performance levels of up to 560 MB/s and 530 MB/s, respectively
  • SECURE ENCRYPTION: Protect data by selecting security options, including AES 256-bit hardware-based encryption compliant with TCG Opal and IEEE 1667
  • COMPATIBILITY: Windows 8/Windows 7/Windows Server 2003 (32 bit and 64 bit), Vista (SP1 and above), XP (SP2 and above), MAC OSX and Linux
  • Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
  • INCLUDED CONTENTS: 2.5 inches (7 millimeter) SATA 3 (6 Gb/s) SSD & User Manual (All other cables, screws, brackets not included)
Brand

SamSung

Products Status

New

Model

MZ-76P512BW

Used For

Consumer

Application

Desktop

Capacity

512GB

Form Factor

2.5"

Memory Components

V-NAND 2-bit MLC

Max Sequential Read

Up to 560 MB/s

4KB Random Read

Random (QD1): Up to 11 000 IOPS, Random (QD32): Up to 100 000 IOPS

4KB Random Write

Random (QD1): Up to 43 000 IOPS, Random (QD32): Up to 90 000 IOPS

Depth

100.00mm

Max Shock Resistance

1 500G & 0.5 ms (Half sine)

Width

69.85mm

Power Consumption (Active)

Average: 2.0W, Maximum: 4.0W (Burst mode)

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