- INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 860 PRO SSD offers optimized performance for everyday computing as well as rendering large-sized 4K videos and 3D data used by the latest applications
- ENHANCED READ WRITE SPEEDS: Sequential read and write performance levels of up to 560 MB/s and 530 MB/s, respectively
- SECURE ENCRYPTION: Protect data by selecting security options, including AES 256-bit hardware-based encryption compliant with TCG Opal and IEEE 1667
- COMPATIBILITY: Windows 8/Windows 7/Windows Server 2003 (32 bit and 64 bit), Vista (SP1 and above), XP (SP2 and above), MAC OSX and Linux
- Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
- INCLUDED CONTENTS: 2.5 inches (7 millimeter) SATA 3 (6 Gb/s) SSD & User Manual (All other cables, screws, brackets not included)
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SAMSUNG 860 Pro Series 2.5″ 2TB SATA III V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-76P2T0BW
The SAMSUNG 860 Pro Series 2TB SSD delivers enterprise-grade performance with cutting-edge V-NAND 2-bit MLC technology, offering exceptional durability with up to 1,200 TBW endurance and a 5-year warranty. This premium internal drive provides blazing-fast sequential read speeds up to 560 MB/s and write speeds up to 530 MB/s, dramatically reducing boot times and application loading. The 2TB capacity accommodates extensive file storage while maintaining consistent performance through intelligent TurboWrite technology and advanced wear leveling. Built with Samsung’s proven reliability and backed by comprehensive data migration software, the 860 Pro represents the pinnacle of consumer SSD technology for power users, content creators, and professionals demanding maximum performance and longevity from their storage solution.
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| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-76P2T0BW |
| Used For | Consumer |
| Application | Desktop |
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-76P2T0BW |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 2TB |
| Form Factor | 2.5" |
| Memory Components | V-NAND 2-bit MLC |
| Max Sequential Read | Up to 560 MB/s |
| 4KB Random Read | Random (QD1): Up to 11 000 IOPS, Random (QD32): Up to 100 000 IOPS |
| 4KB Random Write | Random (QD1): Up to 43 000 IOPS, Random (QD32): Up to 90 000 IOPS |
| Depth | 100.00mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Width | 70.00mm |
| Power Consumption (Active) | Average: 2.2W, Maximum: 4.5W (Burst mode) |
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