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SAMSUNG 860 EVO Series mSATA 500GB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-M6E500BW

The Samsung 860 EVO mSATA 500GB delivers exceptional performance and reliability in a compact form factor. Featuring Samsung’s advanced V-NAND 3-bit MLC technology, this SSD offers up to 550MB/s read speeds and enhanced durability with up to 300 TBW endurance rating. The drive provides 500GB of high-speed storage ideal for ultrabooks, mini PCs, and space-constrained systems. Key advantages include intelligent TurboWrite technology for accelerated write performance, AES 256-bit hardware encryption for data security, and Samsung’s proven track record for SSD reliability. The mSATA interface ensures broad compatibility while the compact design maximizes system flexibility. Backed by a 5-year limited warranty, this drive combines enterprise-grade V-NAND technology with consumer-friendly pricing, making it an excellent choice for users seeking premium performance in a small footprint.

Quote5 pcs(MOQ)

Height4.83mm
Width29.97mm
Used ForConsumer
Device TypeInternal Solid State Drive (SSD)
BrandSamSung
  • mSATA
  • 500GB
  • SATA III
Height

4.83mm

Width

29.97mm

Used For

Consumer

Device Type

Internal Solid State Drive (SSD)

Brand

SamSung

Capacity

500GB

Cache

Samsung 512GB Low Power DDR4 SDRAM

Controller

Samsung MJX

Max Shock Resistance

1 500G & 0.5 ms (Half sine)

Products Status

New

Depth

50.80mm

Storage Temperature

-45C ~ +85C

Application

Desktop

Series

Samsung 860 EVO

Interface

SATA III

Max Sequential Write

Up to 520 MB/s

Features

Boosted endurance, Enhanced performance, Multiple form factors, Samsung Magician, Smart compatibility, The SSD you trust, Up to 8x higher TBW (Terabytes Written) than the 850 EVO. Feel secure storing and rendering large sized 4K videos and 3D data used by the latest applications., Whatever size your computer needs there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs and laptops and the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.

Operating Humidity

5% to 95% RH

Max Sequential Read

Up to 550 MB/s

Power Consumption (Idle)

50 mW

4KB Random Write

QD1: Up to 42 000 IOPS, QD32: Up to 88 000 IOPS

Max Vibration Resistance

20G

MTBF

1 500 000 hours

Model

MZ-M6E500BW

Operating Temperature

0C ~ +70C

Power Consumption (Active)

Average: 2.5W, Maximum: 4.5W (Burst mode)

Weight

81.65g

Form Factor

mSATA

Memory Components

V-NAND 3-bit MLC

4KB Random Read

QD1: Up to 10 000 IOPS, QD32: Up to 97 000 IOPS

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