- mSATA
- 1TB
- SATA III
* NOTE: Image may not exactly match the product
SAMSUNG 860 EVO Series mSATA 1TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-M6E1T0BW
The Samsung 860 EVO mSATA 1TB SSD delivers exceptional performance and reliability in a compact form factor. Featuring Samsung’s advanced V-NAND 3-bit MLC technology, it offers sequential read speeds up to 550 MB/s and write speeds up to 520 MB/s, dramatically improving boot times and application loading compared to traditional hard drives. The drive provides 1TB of high-speed storage with enhanced endurance rated for up to 550 TBW (terabytes written) and backed by a 5-year warranty. Its mSATA interface makes it ideal for ultrabooks, mini PCs, and space-constrained systems requiring fast, reliable storage. The 860 EVO includes Samsung’s Magician software for easy drive management and optimization, while intelligent TurboWrite technology accelerates write performance. This SSD combines proven Samsung quality with cutting-edge NAND technology to deliver superior speed, durability, and energy efficiency for demanding computing applications.
Quote5 pcs(MOQ)
| Height | 4.90mm |
|---|---|
| Width | 29.90mm |
| Used For | Consumer |
| Device Type | Internal Solid State Drive (SSD) |
| Brand | SamSung |
| Height | 4.90mm |
|---|---|
| Width | 29.90mm |
| Used For | Consumer |
| Device Type | Internal Solid State Drive (SSD) |
| Brand | SamSung |
| Capacity | 1TB |
| Cache | Samsung 1GB Low Power DDR4 SDRAM |
| Controller | Samsung MJX Controller |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Products Status | New |
| Depth | 50.80mm |
| Application | Desktop |
| Series | Samsung 860 EVO |
| Interface | SATA III |
| Max Sequential Write | Up to 520 MB/s |
| Features | AES Encryption: AES 256-bit Encryption (Class 0) TCG / Opal IEEE1667 (Encrypted drive), Device Sleep Mode Support, GC (Garbage Collection): Auto Garbage Collection Algorithm, Management SW: Magician Software for SSD management, S.M.A.R.T. Support, TRIM Support, WWN Support: World Wide Name supported |
| Max Sequential Read | Up to 550 MB/s |
| 4KB Random Write | QD1: Up to 42 000 IOPS, QD32: Up to 88 000 IOPS |
| MTBF | 1 500 000 hours |
| Model | MZ-M6E1T0BW |
| Operating Temperature | 0C ~ +70C |
| Power Consumption (Active) | Average: 3.0W, Maximum: 4.5W (Burst mode) |
| Weight | 80.00g |
| Form Factor | mSATA |
| Memory Components | V-NAND 3-bit MLC |
| 4KB Random Read | QD1: Up to 10 000 IOPS, QD32: Up to 97 000 IOPS |
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