- INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 860 EVO SSD offers optimized performance for everyday computing as well as rendering large-sized 4K videos and 3D data used by the latest applications
- ENHANCED READ WRITE SPEEDS: Sequential read and write performance levels of up to 550 MB/s and 520 MB/s, respectively; Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
- SECURE ENCRYPTION: Protect data by selecting security options, including AES 256-bit hardware-based encryption compliant with TCG Opal and IEEE 1667
- COMPATIBILITY: Windows 8/Windows 7/Windows Server 2003 (32 bit and 64 bit), Vista (SP1 and above), XP (SP2 and above), MAC OSX and Linux
- INCLUDED CONTENTS: M.2 SATA (6 Gb/s) SSD & User Manual (All other cables, screws, brackets not included); Operating temperature 0 to 70 degree Celsius
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SAMSUNG 860 EVO Series M.2 2280 2TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E2T0BW
The Samsung 860 EVO M.2 2TB SSD delivers exceptional performance and reliability with Samsung’s proven V-NAND 3-bit MLC technology. This compact M.2 2280 form factor drive offers massive 2TB storage capacity while maintaining energy efficiency and silent operation. Key features include sequential read speeds up to 550 MB/s, enhanced durability with up to 600 TBW endurance rating, and Samsung’s advanced wear leveling and error correction technologies. The drive provides seamless compatibility with laptops and desktops via SATA III interface, making it ideal for users seeking to upgrade system responsiveness, reduce boot times, and eliminate mechanical drive limitations. Backed by Samsung’s reputation for quality and a comprehensive warranty, the 860 EVO M.2 represents an optimal balance of performance, capacity, and value for both professional and personal computing applications.
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| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-N6E2T0BW |
| Used For | Consumer |
| Application | Desktop |
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-N6E2T0BW |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 2TB |
| Form Factor | M.2 2280 |
| Memory Components | V-NAND 3-bit MLC |
| Max Sequential Read | Up to 550 MB/s |
| 4KB Random Read | 4KB QD1: Up to 10 000 IOPS, 4KB QD32: Up to 97 000 IOPS |
| 4KB Random Write | 4KB QD1: Up to 42 000 IOPS, 4KB QD32: Up to 88 000 IOPS |
| Depth | 80.00mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Width | 22.00mm |
| Power Consumption (Active) | Average: 3.0W, Maximum: 4.5W (Burst mode) |
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