- Innovative 3D V-NAND Technology
- Incredible Read/Write Performance
- Enhanced Endurance and Reliability
- M.2 SSD Form Factor for Ultra-thin Laptops and PCs
- Free Download of Samsung Data Migration & Magician software for easy installation and management
SAMSUNG 850 EVO M.2 2280 500GB SATA III 3D NAND Internal SSD Single Unit Version MZ-N5E500BW
The Samsung 850 EVO M.2 500GB SSD delivers exceptional performance with revolutionary 3D V-NAND technology, offering up to 540MB/s read speeds and 520MB/s write speeds. This ultra-compact M.2 2280 form factor provides space-saving installation while maintaining full SATA III compatibility. Built with Samsung’s proven reliability and backed by a 5-year warranty, it features advanced wear leveling, error correction, and thermal management for consistent performance and longevity. The drive significantly reduces boot times, accelerates file transfers, and enhances overall system responsiveness compared to traditional hard drives, making it ideal for laptops, ultrabooks, and compact desktop builds requiring high-speed storage in minimal space.
Quote5 pcs(MOQ)
Height | 2.30mm |
---|---|
Width | 22.00mm |
Used For | Consumer |
Device Type | Internal Solid State Drive (SSD) |
Brand | SamSung |
Height | 2.30mm |
---|---|
Width | 22.00mm |
Used For | Consumer |
Device Type | Internal Solid State Drive (SSD) |
Brand | SamSung |
Capacity | 500GB |
Controller | Samsung MGX Controller |
Max Shock Resistance | 1 500G & 0.5ms (Half sine) |
Products Status | New |
Depth | 80.00mm |
Application | Desktop |
Series | Samsung 850 EVO |
Interface | SATA III |
Max Sequential Write | Up to 500 MB/s |
Features | Enhanced Endurance and Reliability, Incredible Read/Write Performance, Innovative 3D V-NAND Technology, The Most Evolved SSD for Ultra-thin Laptops and PCs |
Max Sequential Read | Up to 540 MB/s |
4KB Random Write | Up to 89 000 IOPS |
MTBF | 1 500 000 hours |
Model | MZ-N5E500BW |
Operating Temperature | 0C ~ +70C |
Weight | 0.09 lb. |
Form Factor | M.2 2280 |
Memory Components | 3D NAND |
4KB Random Read | Up to 97 000 IOPS |
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