- Innovative 3D V-NAND Technology
- Incredible Read/Write Performance
- Enhanced Endurance and Reliability
- M.2 SSD Form Factor for Ultra-thin Laptops and PCs
- Free Download of Samsung Data Migration & Magician software for easy installation and management
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SAMSUNG 850 EVO M.2 2280 250GB SATA III 3D NAND Internal SSD Single Unit Version MZ-N5E250BW
The Samsung 850 EVO M.2 250GB SSD delivers exceptional performance with revolutionary 3D V-NAND technology that stacks memory cells vertically for superior speed, reliability, and endurance. This ultra-compact M.2 2280 form factor drive offers blazing-fast boot times, instant application launches, and seamless multitasking while consuming minimal power. Built with Samsung’s proven reliability and backed by advanced wear-leveling algorithms, it provides up to 10x faster performance than traditional hard drives with silent operation and shock resistance. The drive includes Samsung Magician software for easy optimization and monitoring, making it the perfect upgrade for laptops and compact desktops seeking premium storage performance in a space-saving design.
Quote5 pcs(MOQ)
| Height | 2.30mm |
|---|---|
| Width | 22.00mm |
| Used For | Consumer |
| Device Type | Internal Solid State Drive (SSD) |
| Brand | SamSung |
| Height | 2.30mm |
|---|---|
| Width | 22.00mm |
| Used For | Consumer |
| Device Type | Internal Solid State Drive (SSD) |
| Brand | SamSung |
| Capacity | 250GB |
| Cache | 512MB |
| Controller | MGX |
| Max Shock Resistance | 1500G & 0.5ms (Half sine) |
| Products Status | New |
| Depth | 80.00mm |
| Application | Desktop |
| Series | Samsung 850 EVO |
| Interface | SATA III |
| Max Sequential Write | Up to 500 MB/s |
| Max Sequential Read | Up to 540 MB/s |
| Power Consumption (Idle) | 50 mW |
| 4KB Random Write | Up to 40 000 IOPS (4KB QD1), Up to 89 000 IOPS (4KB QD32) |
| Model | MZ-N5E250BW |
| Operating Temperature | 0C ~ +70C |
| Power Consumption (Active) | Average: 2.4W, Maximum: 3.7W (Burst mode) |
| Weight | 0.09 lb. |
| Form Factor | M.2 2280 |
| Memory Components | 3D NAND |
| 4KB Random Read | Up to 10 000 IOPS (4KB QD1), Up to 97 000 IOPS (4KB QD32) |
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