- Innovation V-NAND Technology
- Incredible Read/Write Performance
- Enhanced Endurance and Reliability
- 2.5″ Form Factor Ideal for most current Laptops and Desktop PCs
- Free Download of Samsung Data Migration & Magician software for easy installation and management
* NOTE: Image may not exactly match the product
SAMSUNG 850 EVO 2.5″ 4TB SATA III 3D NAND Internal Solid State Drive (SSD) MZ-75E4T0B/AM
The SAMSUNG 850 EVO 4TB SSD delivers exceptional performance and reliability with cutting-edge 3D V-NAND technology that stacks memory cells vertically for superior speed and endurance. This 2.5-inch drive offers massive 4TB storage capacity, SATA III 6Gb/s interface with read speeds up to 540MB/s, and write speeds up to 520MB/s. Key benefits include dramatically faster boot times, application loading, and file transfers compared to traditional hard drives, plus enhanced durability with no moving parts. The drive features advanced wear leveling, error correction, and thermal management for long-term reliability. Backed by Samsung’s proven track record and 5-year warranty, this SSD transforms system performance while providing enterprise-grade storage capacity for power users, content creators, and professionals requiring both speed and substantial storage space.
Quote5 pcs(MOQ)
| Height | 6.80mm |
|---|---|
| Width | 69.85mm |
| Used For | Consumer |
| Device Type | Internal Solid State Drive (SSD) |
| Brand | SamSung |
| Height | 6.80mm |
|---|---|
| Width | 69.85mm |
| Used For | Consumer |
| Device Type | Internal Solid State Drive (SSD) |
| Brand | SamSung |
| Capacity | 4TB |
| Cache | 4GB |
| Controller | MHX |
| Max Shock Resistance | Non-Operating: 1500G duration 0.5m sec 3 axis |
| Products Status | New |
| Depth | 100.00mm |
| Storage Temperature | -40C ~ +85C |
| Application | Desktop |
| Series | Samsung 850 EVO |
| Interface | SATA III |
| Max Sequential Write | Up to 520 MB/s |
| Operating Humidity | 5% to 95% RH |
| Max Sequential Read | Up to 540 MB/s |
| Power Consumption (Idle) | 70mW |
| 4KB Random Write | Up to 40 000 IOPS (QD1), Up to 90 000 IOPS (QD32) |
| Max Vibration Resistance | Non-Operating: 20~2000Hz 20G |
| MTBF | 1 500 000 hours |
| Model | MZ-75E4T0B/AM |
| Operating Temperature | 0C ~ +70C |
| Power Consumption (Active) | 3.1W/3.6W (Read/Write) |
| Weight | 55.00g |
| Form Factor | 2.5" |
| Memory Components | 3D NAND |
| 4KB Random Read | Up to 10 000 IOPS (QD1), Up to 98 000 IOPS (QD32) |
Inquiry Now
Contact us for more discounts!
