- INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 860 EVO SSD offers optimized performance for everyday computing as well as rendering large-sized 4K videos and 3D data used by the latest applications
- ENHANCED READ WRITE SPEEDS: Sequential read and write performance levels of up to 550 MB/s and 520 MB/s, respectively; Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
- SECURE ENCRYPTION: Protect data by selecting security options, including AES 256-bit hardware-based encryption compliant with TCG Opal and IEEE 1667
- COMPATIBILITY: Windows 8/Windows 7/Windows Server 2003 (32 bit and 64 bit), Vista (SP1 and above), XP (SP2 and above), MAC OSX and Linux
- INCLUDED CONTENTS: M.2 SATA (6 Gb/s) SSD & User Manual (All other cables, screws, brackets not included); Operating temperature 0 to 70 degree Celsius
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SAMSUNG 860 EVO Series M.2 2280 250GB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E250BW
The SAMSUNG 860 EVO M.2 250GB SSD delivers exceptional performance and reliability in a compact form factor. Featuring Samsung’s advanced V-NAND 3-bit MLC technology, it offers sequential read speeds up to 550 MB/s and write speeds up to 520 MB/s, dramatically reducing boot times and application loading. The M.2 2280 design saves space while maintaining SATA III compatibility for easy installation in laptops and compact desktops. Built with Samsung’s proven reliability, it includes a 5-year warranty and enhanced durability with up to 150 TBW endurance. The drive’s intelligent TurboWrite technology accelerates write performance, while built-in data migration software ensures seamless upgrades from traditional hard drives. Ideal for users seeking faster system responsiveness, improved multitasking, and energy-efficient storage in a space-constrained environment.
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| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-N6E250BW |
| Used For | Consumer |
| Application | Desktop |
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-N6E250BW |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 250GB |
| Form Factor | M.2 2280 |
| Memory Components | V-NAND 3-bit MLC |
| Max Sequential Read | Up to 550 MB/s |
| 4KB Random Read | Random (QD1): Up to 10 000 IOPS; Random (QD32): Up to 97 000 IOPS |
| 4KB Random Write | Random (QD1): Up to 42 000 IOPS; Random (QD32): Up to 88 000 IOPS |
| Storage Temperature | -45C ~ +85C |
| Depth | 80.00mm |
| Max Shock Resistance | 1500G |
| Width | 22.00mm |
| Power Consumption (Active) | 2.2 W |
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