- INNOVATIVE V NAND TECHNOLOGY: Powered by Samsung V NAND Technology, the 970 EVO SSD’s NVMe interface (PCIe M.2 2280) offers enhanced bandwidth, low latency, and power efficiency ideal for tech enthusiasts, high end gamers, and 4K & 3D content designers
- BREAKTHROUGH READ WRITE SPEEDS: Sequential read and write performance levels of up to 3,400 MB/s and 2,500 MB/s, respectively; Random Read (4KB, QD32): Up to 500,000 IOPS Random Read
- PERFORMANCE OPTIMIZATION AND DATA SECURITY: Seamless cloning and file transfers with Samsung Magician Software, the ideal SSD management solution for performance optimization and data security with automatic firmware updates
- SUPERIOR HEAT DISSIPATION: Samsung’s Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops. Secure Encryption
- 600 TBW (Terabytes Written)
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SAMSUNG 970 EVO M.2 2280 1TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E1T0BW
The SAMSUNG 970 EVO M.2 SSD delivers exceptional performance with PCIe Gen3 x4 interface and NVMe 1.3 protocol, offering read speeds up to 3,500 MB/s and write speeds up to 3,300 MB/s. Built with Samsung’s advanced 64-layer V-NAND 3-bit MLC technology, this 1TB drive provides superior reliability, endurance, and power efficiency compared to traditional SATA SSDs. The compact M.2 2280 form factor saves space while eliminating cables, making it ideal for ultrabooks, gaming laptops, and high-performance desktops. Key advantages include dramatically faster boot times, instant application loading, seamless multitasking, and enhanced system responsiveness. Samsung’s proven track record in memory technology, combined with comprehensive software suite and 5-year warranty, makes the 970 EVO an outstanding choice for users demanding premium storage performance and reliability.
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| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V7E1T0BW |
| Used For | Consumer |
| Application | Desktop |
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V7E1T0BW |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 1TB |
| Form Factor | M.2 2280 |
| Memory Components | 64L V-NAND MLC |
| Max Sequential Read | Up to 3400 MB/s |
| 4KB Random Read | QD1: Up to 15 000 IOPS, QD32: Up to 500 000 IOPS |
| 4KB Random Write | QD1: Up to 50 000 IOPS, QD32: Up to 450 000 IOPS |
| Depth | 80.26mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Width | 22.10mm |
| Power Consumption (Active) | Average: 6W, Maximum: 10W (Burst mode) |
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