- Innovation V-NAND Technology
- Incredible Read/Write Performance
- Enhanced Endurance and Reliability
- 2.5″ Form Factor Ideal for most current Laptops and Desktop PCs
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SAMSUNG 850 EVO 2.5″ 500GB SATA III 32 layer 3D V-NAND Internal Solid State Drive (SSD) MZ-75E500B/AM
The Samsung 850 EVO 500GB SSD delivers exceptional performance and reliability with cutting-edge 32-layer 3D V-NAND technology. This 2.5-inch SATA III drive offers read speeds up to 540 MB/s and write speeds up to 520 MB/s, dramatically reducing boot times and application loading. The innovative 3D V-NAND architecture provides superior endurance with up to 150 TBW (terabytes written) and enhanced power efficiency. Features AES 256-bit hardware encryption for data security, intelligent TurboWrite technology for sustained performance, and Samsung’s proven reliability backed by a 5-year limited warranty. Ideal for upgrading laptops and desktops, this SSD transforms system responsiveness while offering excellent value for mainstream users seeking professional-grade storage performance.
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| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-75E500B/AM |
| Series | Samsung 850 EVO |
| Used For | Consumer |
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-75E500B/AM |
| Series | Samsung 850 EVO |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 500GB |
| Form Factor | 2.5" |
| Memory Components | 32 layer 3D V-NAND |
| Max Sequential Read | Up to 540 MB/s |
| 4KB Random Read | Random Read (4KB QD1): Up to 10 000 IOPS, Random Read (4KB QD32): Up to 98 000 IOPS |
| 4KB Random Write | Random Write (4KB QD1): Up to 40 000 IOPS, Random Write (4KB QD32): Up to 90 000 IOPS |
| Depth | 100.08mm |
| Width | 69.85mm |
| Power Consumption (Active) | Average: 3.0W, Maximum: 3.5W (Burst mode) |
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