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SAMSUNG 970 EVO PLUS M.2 2280 250GB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND Internal Solid State Drive (SSD) MZ-V7S250B/AM

The SAMSUNG 970 EVO PLUS is a high-performance M.2 NVMe SSD that delivers exceptional speed and reliability for demanding computing tasks. With PCIe Gen 3.0 x4 interface and NVMe 1.3 protocol, it offers sequential read speeds up to 3,500 MB/s and write speeds up to 3,200 MB/s – dramatically faster than traditional SATA drives. The drive features Samsung’s advanced V-NAND technology for enhanced durability and efficiency, while the compact M.2 2280 form factor saves space in laptops and desktops. Its 250GB capacity provides ample storage for operating systems, applications, and frequently accessed files. The drive includes intelligent TurboWrite technology for sustained performance and comes with Samsung’s Magician software for easy optimization and monitoring. Backed by a 5-year warranty, this SSD is ideal for gamers, content creators, and professionals seeking to eliminate boot delays and accelerate system responsiveness.

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BrandSamSung
Products StatusNew
ModelMZ-V7S250B/AM
Used ForConsumer
ApplicationDesktop
  • INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 970 EVO Plus SSD’s NVMe interface (PCIe Gen 3.0 x4 NVMe 1.3) offers enhanced bandwidth, low latency, and power efficiency ideal for tech enthusiasts, high end gamers, and 4K & 3D content designers
  • BREAKTHROUGH READ WRITE SPEEDS: Sequential read and write performance levels of up to 3,500 MB/s and 2,300 MB/s, respectively; Random Read (4KB, QD32): Up to 250,000 IOPS Random Read
  • PERFORMANCE OPTIMIZATION AND DATA SECURITY: Seamless cloning and file transfers with Samsung Magician Software, the ideal SSD management solution for performance optimization and data security with automatic firmware updates
  • SUPERIOR HEAT DISSIPATION: Samsung’s Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops
  • 150 TBW (Terabytes Written)
Brand

SamSung

Products Status

New

Model

MZ-V7S250B/AM

Used For

Consumer

Application

Desktop

Capacity

250GB

Form Factor

M.2 2280

Memory Components

V-NAND 3-bit MLC

Max Sequential Read

Up to 3500 MB/s

4KB Random Read

QD1: Up to 17 000 IOPS, QD32: Up to 250 000 IOPS

4KB Random Write

QD1: Up to 60 000 IOPS, QD32: Up to 550 000 IOPS

Depth

80.15mm

Max Shock Resistance

1 500G & 0.5 ms (Half sine)

Width

22.15mm

Encryption

AES 256-bit Full Disk Encryption TCG/Opal V2.0 Encrypted Drive (IEEE1667)

Power Consumption (Active)

Average: 5W, Maximum: 8W (Burst mode)

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