- INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 970 EVO Plus SSD’s NVMe interface (PCIe Gen 3.0 x4 NVMe 1.3) offers enhanced bandwidth, low latency, and power efficiency ideal for tech enthusiasts, high end gamers, and 4K & 3D content designers
- BREAKTHROUGH READ WRITE SPEEDS: Sequential read and write performance levels of up to 3,500 MB/s and 3,300 MB/s, respectively; Random Read (4KB, QD32): Up to 620,000 IOPS Random Read
- PERFORMANCE OPTIMIZATION AND DATA SECURITY: Seamless cloning and file transfers with Samsung Magician Software, the ideal SSD management solution for performance optimization and data security with automatic firmware updates
- SUPERIOR HEAT DISSIPATION: Samsung’s Nickel-coated controller and Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops
- 1200 TBW (Terabytes Written)
* NOTE: Image may not exactly match the product
SAMSUNG 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND Internal Solid State Drive (SSD) MZ-V7S2T0B/AM
The SAMSUNG 970 EVO PLUS is a high-performance 2TB M.2 NVMe SSD that delivers exceptional speed and reliability for demanding computing tasks. Featuring Samsung’s advanced V-NAND technology and PCIe Gen 3.0 x4 interface, it achieves read speeds up to 3,500 MB/s and write speeds up to 3,300 MB/s—dramatically reducing boot times, file transfers, and application loading. The compact M.2 2280 form factor saves space while providing enterprise-grade endurance with up to 1,200 TBW (Total Bytes Written). Enhanced with Dynamic Thermal Guard technology to prevent overheating and backed by Samsung’s proven reliability, this SSD offers an ideal upgrade for gamers, content creators, and professionals seeking maximum storage performance without compromising system efficiency.
Quote5 pcs(MOQ)
Premium Client Discounts Available
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V7S2T0B/AM |
| Used For | Consumer |
| Application | Desktop |
| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V7S2T0B/AM |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 2TB |
| Form Factor | M.2 2280 |
| Memory Components | Samsung V-NAND 3-bit MLC |
| Max Sequential Read | Up to 3500 MB/s |
| 4KB Random Read | 4KB QD1: Up to 19 000 IOPS, 4KB QD32: Up to 620 000 IOPS |
| 4KB Random Write | 4KB QD1: Up to 62 000 IOPS, 4KB QD32: Up to 560 000 IOPS |
| Depth | 80.15mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Width | 22.15mm |
| Encryption | AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive) |
| Power Consumption (Active) | Average: 6W, Maximum: 9W (Burst mode) |
Inquiry Now
Contact us for more discounts!
